L. Tapfer et al., DOUBLE-CRYSTAL AND TRIPLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF SEMICONDUCTOR QUANTUM WIRES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 179-183
In this work we show the potential of high-resolution x-ray diffractom
etry for the non-destructive investigation of nanostructures and low-d
imensional semiconductor systems. A characterization of the geometrica
l and structural properties of corrugated semiconductor surfaces (crys
talline surface gratings) and semiconductor quantum wires is presented
. Double-crystal and triple-crystal x-ray diffraction measurements and
reciprocal-space mapping are used in order to determine the geometric
al parameters such as the wire periodicity, width and height and the c
orrugation profile as well as the strain status of quantum wires.