DOUBLE-CRYSTAL AND TRIPLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF SEMICONDUCTOR QUANTUM WIRES

Citation
L. Tapfer et al., DOUBLE-CRYSTAL AND TRIPLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF SEMICONDUCTOR QUANTUM WIRES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 179-183
Citations number
19
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
28
Issue
4A
Year of publication
1995
Pages
179 - 183
Database
ISI
SICI code
0022-3727(1995)28:4A<179:DATXAO>2.0.ZU;2-4
Abstract
In this work we show the potential of high-resolution x-ray diffractom etry for the non-destructive investigation of nanostructures and low-d imensional semiconductor systems. A characterization of the geometrica l and structural properties of corrugated semiconductor surfaces (crys talline surface gratings) and semiconductor quantum wires is presented . Double-crystal and triple-crystal x-ray diffraction measurements and reciprocal-space mapping are used in order to determine the geometric al parameters such as the wire periodicity, width and height and the c orrugation profile as well as the strain status of quantum wires.