STRUCTURAL INVESTIGATIONS OF GAAS ALAS QUANTUM WIRES AND QUANTUM DOTSBY X-RAY RECIPROCAL SPACE MAPPING/

We have investigated periodic arrays of dry etched 150 nm and 175 nm w ide, [110] oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis x-ray diffractometry. Fr om the x-ray data the lateral periodicity of wires and dots, the etch depth and the angle of misorientation of the wires with respect to the [110] direction are extracted. The reciprocal-space maps reveal that, after the fabrication process the lattice constant along the growth d irection increases slightly for the wires and even more so for the dot s.