THE EFFECT OF CHEMICAL BONDING ON THE PHYSICAL BEHAVIOR OF THE AMORPHOUS GEXSE1-X SYSTEM

Thermograms of GexSe1-x amorphous samples of different compositions (0 .05 less than or equal to x less than or equal to 0.30) were obtained at four different heating rates. It was possible to estimate the activ ation energy of crystallization of two compositions only (x = 0.15 and 0.30). The cohesive energy and related parameters such as coordinatio n number (m) and number of constraints N-co were calculated. A trail w as made to correlate our results with available published experimental data. The high-frequency dielectric constant epsilon(infinity) was de termined for different compositions using published data. Obtained val ues of epsilon(infinity) were correlated with obtained results.