HIGH-FIELD ZNO-BASED VARISTORS

The role of principal additives is investigated in an attempt to obtai n high-threshold-field ZnO-based varistors in the traditional way. In the order of effect level, these are Sb2O3, Co3O4, Cr2O3 and MnO2. In the range of 0.5-5 mol%, the increase of additive content decreases th e average ZnO grain size. As a result, the number of grains per unit t hickness increases, which gives rise to the threshold field. The value of barrier voltage v(b) calculated from experimental data is about 1. 4-2 V. The potential barrier height determined from the temperature de pendence of the current-voltage characteristics is 0.3-0.5 eV. The abn ormally large v(b) of a sample doped with 8 mol% Sb2O3 is quantitative ly interpreted by the influence of the spinel phase through the energy -band-bending effect caused by the Bi2O3-rich phase and the hypothesis of a 'preferential path' of the current.