N. Thomas et al., INFLUENCE OF HYDROGEN PRESSURE ON THE PROPERTIES OF CVD TUNGSTEN SILICIDE FILMS, Journal of the Electrochemical Society, 142(5), 1995, pp. 1608-1614
In this paper, the properties of low pressure chemically vapor deposit
ed tungsten silicide films processed from tungsten chlorides and silan
e are studied as a function of hydrogen initial partial pressure. By m
eans of thermodynamic calculations, we have defined a priori the opera
ting conditions leading to each silicide deposition. The corresponding
films are grown in a cold-wall reactor and characterized by x-ray dif
fraction and scanning electron microscopy studies. Good agreement betw
een theoretical and experimental results is obtained. The increase of
initial hydrogen partial pressure has two possible consequences: a mod
ification of the film composition for high WCl4 partial pressure and a
modification of the film growth rate for lower WCl4 partial pressure.