THE INFLUENCE OF MEDIUM DOSE ION-IMPLANTATION ON THE RELIABILITY OF THIN GATE OXIDE

The influence of medium dose ion implantation on the dielectric breakd own reliability of thin gate oxide is discussed. Medium dose ion impla ntation and subsequent high temperature oxidation degrade the dielectr ic breakdown characteristics of metal oxide semiconductor capacitors. The deterioration of breakdown characteristics Strongly depends on ion species, dose, oxidation temperature, and oxidation ambient. The diel ectric breakdown fields and charge to breakdown (Q(BD)) reduce drastic ally at doses of 5 x 10(13), 1 x 10(14), and 5 x 10(14) cm(-2) for the arsenic (As+), phosphorus (P+), and boron (B+) implantation, respecti vely. The breakdowns occur due to weak spots formed along the localize d oxidation of silicon (LOGOS) edge by the combination of medium dose ion implantation, high temperature oxidation, and residual stress near the LOGOS edge.