KINETIC MODELING OF SILANE SURFACE-REACTIONS

A detailed kinetic modeling for SiH4/H-2 surface reactions on Si(111)- (7 x 7) surface during chemical vapor deposition is presented. Based o n the conservation of adsorbed species at steady state, an analytical expression for growth rate (GR) as a function of surface temperature, silane and hydrogen partial pressures is derived. By curve fitting to previously reported experimental values, preexponential coefficients a nd activation energies in the GR formula are further derived. Predicti ons of Gr, E(app), and T-tr under different growth parameters are give n and compared to literature values. The model is further extended to SiH4/H-2 mixture surface reactions thus the reaction orders of SiH4 an d H-2 are predicted. Good agreements with literature values are obtain ed under low pressure conditions.