SUBMONOLAYER EPITAXY WITHOUT A CRITICAL NUCLEUS

Citation
C. Ratsch et al., SUBMONOLAYER EPITAXY WITHOUT A CRITICAL NUCLEUS, Surface science, 329(1-2), 1995, pp. 599-604
Citations number
32
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
329
Issue
1-2
Year of publication
1995
Pages
599 - 604
Database
ISI
SICI code
0039-6028(1995)329:1-2<599:SEWACN>2.0.ZU;2-Y
Abstract
The nucleation and growth of two-dimensional islands is studied with M onte Carlo simulations of a pair-bond solid-on-solid model of epitaxia l growth. The conventional description of this problem in terms of a w ell-defined critical island size fails because no islands are absolute ly stable against single atom detachment by thermal bond breaking. Whe n two-bond scission is negligible, we find that the ratio of the dimer dissociation rate to the rate of adatom capture by dimers uniquely in dexes both the island size distribution scaling function and the depen dence of the island density on the flux and the substrate temperature. Effective pair-bond model parameters are found that yield excellent q uantitative agreement with scaling functions measured for Fe/Fe(001).