IR LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYCARBIDE PHASES FROM 1,1,3,3-TETRAMETHYLDISILOXANE

The infrared multiphoton decomposition of 1,1,3,3-tetramethyldisiloxan e induced by a TEA CO2 laser affords gaseous C-1-C-2 hydrocarbons, dim ethylsilane and trimethylsilane along with a solid silicon oxycarbide film with almost equal content of Si, C and O atoms. Irradiation of a cw CO2 laser into 1,1,3,3-tetramethyldisiloxane in the presence of SF6 yields dimethylfluorosilane and dimethyldifluorosilane showing the re action between both compounds.