INFLUENCE OF ETCHING ON THE SURFACE-PROPERTIES OF CD0.99MN0.01TE GALLIUM DOPED

Authors
BIEG B KUZMINSKI S SZATKOWSKI J
Citation
B. Bieg et al., INFLUENCE OF ETCHING ON THE SURFACE-PROPERTIES OF CD0.99MN0.01TE GALLIUM DOPED, Vacuum, 46(5-6), 1995, pp. 481-483
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
46
Issue
5-6
Year of publication
1995
Pages
481 - 483
Database
ISI
SICI code
0042-207X(1995)46:5-6<481:IOEOTS>2.0.ZU;2-6
Abstract
The influence of surface treatment on the surface properties of Cd0.99 Mn0.01Te gallium doped was studied. Using surface photovoltage spectro scopy (SPS) we have investigated three types of the monocrystal surfac es: polished with 'Gamal', etched in 5% Br-2/methanol and etched in KO H/H2O. Changes in the electronic structure of Cd0.99Mn0.01Te:Ga surfac es were observed. The temperature dependence of the band gap and surfa ce states have been determined for each sample.