700-MB S MONOLITHICALLY INTEGRATED 4-CHANNEL RECEIVER ARRAY OEIC USING ION-IMPLANTED INGAAS JFET TECHNOLOGY/

Citation
D. Romer et al., 700-MB S MONOLITHICALLY INTEGRATED 4-CHANNEL RECEIVER ARRAY OEIC USING ION-IMPLANTED INGAAS JFET TECHNOLOGY/, IEEE photonics technology letters, 7(5), 1995, pp. 543-545
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
7
Issue
5
Year of publication
1995
Pages
543 - 545
Database
ISI
SICI code
1041-1135(1995)7:5<543:7SMI4R>2.0.ZU;2-Y
Abstract
A four channel receiver array suitable for wavelength division multipl exing and parallel optical interconnects has been fabricated. This is achieved by planar monolithic integration of ion implanted junction fi eld-effect transistors, pin photo diodes and level shift diodes in the InGaAs-InP material system. At a data rate of 700 Mb/s the receiver s ensitivity is -32 dBm with a high homogeneity over all channels. The c rosstalk attenuation is better than 36 dB.