ACCURATE EXTRACTION OF DUAL-GATE FIELD-EFFECT-TRANSISTOR PARASITIC ELEMENTS

Authors
LANGREZ D DELOS E SALMER G
Citation
D. Langrez et al., ACCURATE EXTRACTION OF DUAL-GATE FIELD-EFFECT-TRANSISTOR PARASITIC ELEMENTS, Microwave and optical technology letters, 9(2), 1995, pp. 91-95
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
9
Issue
2
Year of publication
1995
Pages
91 - 95
Database
ISI
SICI code
0895-2477(1995)9:2<91:AEODFP>2.0.ZU;2-R
Abstract
This article describes an accurate method for the extraction of dual-g ate field-effect-transistor (FET) parasitic elements. Parallel and ser ies elements are separately determined in two differ ent steps under t he cold regime (V-ds = 0 V). The effect of parasitic capacitances on Z (ij) parameters is taken into account when extracting parasitic induct ances. Some experimental results about 0.15-mu m dual- and single-gate PM-HEMTs are given. (C) 1995 John Wiley & Sons, Inc.