MICROWAVE PERFORMANCE OF A GA0.20IN0.80P GA0.47IN0.53AS/INP HFET GROWN WITH MOVPE/

Authors
RORSMAN N KARLSSON C HSU CC WANG SM ZIRATH H
Citation
N. Rorsman et al., MICROWAVE PERFORMANCE OF A GA0.20IN0.80P GA0.47IN0.53AS/INP HFET GROWN WITH MOVPE/, Electronics Letters, 31(9), 1995, pp. 734-735
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
9
Year of publication
1995
Pages
734 - 735
Database
ISI
SICI code
0013-5194(1995)31:9<734:MPOAGG>2.0.ZU;2-Z
Abstract
The authors have DC, RF, and noise characterised 0.15 mu M gate-length HFETs fabricated on a pseudomorphic Ga0.20In0.80P/Ga0.47In0.53As/InP material grown with MOVPE. The extrinsic transconductance is 640mS/mm. The maximum frequency of oscillation is 260GHz and the intrinsic tran sit frequency is 165GHz. The DC and RF performances of this HFET are c omparable with InAlAs/InGaAs/InP HFETs. The drain breakdown voltage of this HFET is 50% higher than InAlAs/InGaAs/InP HFETs fabricated in th e authors' laboratory.