The influence of the substrate bias on the hot-carrier effects in thin
-film SOI MOSFETs is investigated. It is shown that the high-field pro
perties strongly depend on the substrate bias, with a substantial decr
ease of the impact ionisation rate for volume inversion operation, whi
ch is very promising for the reduction of hot-carrier-induced degradat
ion of double-gate SOI MOSFETs. Furthermore, the analysis of the elect
rical properties of these devices in a wide temperature range allows u
s to propose a satisfactory model for the hot-carrier behaviours, whic
h highlights the role of the substrate bias for control of the high-fi
eld region and, thus, of the nonstationary transport in thin Si films.