HOT-CARRIER TRANSPORT IN THIN-FILM SOI MOSFETS AT ROOM AND CRYOGENIC TEMPERATURES

The influence of the substrate bias on the hot-carrier effects in thin -film SOI MOSFETs is investigated. It is shown that the high-field pro perties strongly depend on the substrate bias, with a substantial decr ease of the impact ionisation rate for volume inversion operation, whi ch is very promising for the reduction of hot-carrier-induced degradat ion of double-gate SOI MOSFETs. Furthermore, the analysis of the elect rical properties of these devices in a wide temperature range allows u s to propose a satisfactory model for the hot-carrier behaviours, whic h highlights the role of the substrate bias for control of the high-fi eld region and, thus, of the nonstationary transport in thin Si films.