K-BAND GAINAS INP CHANNEL POWER HEMTS

Authors
MATLOUBIAN M LIU T JELLOIAN LM THOMPSON MA RHODES RA
Citation
M. Matloubian et al., K-BAND GAINAS INP CHANNEL POWER HEMTS, Electronics Letters, 31(9), 1995, pp. 761-762
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
9
Year of publication
1995
Pages
761 - 762
Database
ISI
SICI code
0013-5194(1995)31:9<761:KGICPH>2.0.ZU;2-9
Abstract
The authors report on the DC and power performance of GaInAs/InP compo site channel HEMTs with a 30 Angstrom GaInAs channel. Devices with gat e length of 0.15 mu m exhibit off-state drain-to-source breakdown volt ages of more than 10V and on-state drain-to-source breakdown voltages of 8V. Using a 450 mu m wide HEMT, an output power of more than 280mW (0.62W/mm) has been obtained with power-added efficiency of 46% at 20G Hz.