METHOD FOR EXTRACTING DEEP-SUBMICROMETER MOSFET PARAMETERS

As the MOSFET channel length srihnks to 0.1 mu m, the influence of the lateral field on the device characteristics becomes increasingly impo rtant even at low drain voltage (10mV). The authors present a new meth od which takes into account the effect of the lateral field to extract the deep submicrometre MOSFET parameters such as threshold voltage, e ffective channel length, effective mobility and parasitic series resis tance.