VACUUM-ULTRAVIOLET SUBSTRATE CLEANING AND ETCHING

Authors
ALLEN LR GRANT JM NGUYEN T VALIEV K VELIKOV L MESHMAN B
Citation
Lr. Allen et al., VACUUM-ULTRAVIOLET SUBSTRATE CLEANING AND ETCHING, Solid state technology, 38(5), 1995, pp. 77
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
38
Issue
5
Year of publication
1995
Database
ISI
SICI code
0038-111X(1995)38:5<77:VSCAE>2.0.ZU;2-I
Abstract
Light in the vacuum ultraviolet region (120-160 nm) promotes high quan tum efficiency photoexcited processes (e.g., C-C bond breaking, oxygen molecule dissociation), has a very small penetration depth (30-50 nm) , and can be used effectively in silicon surface cleaning. This articl e discusses potential applications of this technology and describes a vacuum ultraviolet light source.