THE ASSESSMENT OF SOME SB-TE SINGLE-SOURCE COMPOUNDS FOR MOCVD APPLICATIONS

The new compounds Et(2)SbTeEt, Me(2)SbTeEt, Et(2)SbTe(i)Pr and Et(2)As TeEt have been prepared by reactions of Et(4)Sb(2),. Me(4)Sb(2) or Et( 4)As(2) with (Pr2Te2)-Pr-i or Et(2)Te(2). An alternative route to Et(2 )SbTeEt involved the reaction of Et(2)SbBr with EtTeLi. The compounds are light sensitive, and some of them cannot be obtained pure because of facile radical decomposition or reverse dissociation to the corresp onding R(4)E(2) and R'Te-2(2). Thermal degradation of Et(2)SbTeEt in a hydrogen stream under conventional MOCVD condition gives a metal depo sit containing Sb and Te in the ratio 1.6:1. The related compound Et(2 )SbTeSbEt(2) reacts with H-2 at room temperature to give Te metal and presumably HSbEt(2).