CREATION OF A PN HETEROJUNCTION IN HG1-XCDXTE (X-APPROXIMATE-TO-0.2) BY LASER ANNEALING

Authors
SHEREGII E KUZMA M ABEYNAYAKE C POCIASK M
Citation
E. Sheregii et al., CREATION OF A PN HETEROJUNCTION IN HG1-XCDXTE (X-APPROXIMATE-TO-0.2) BY LASER ANNEALING, Canadian journal of physics, 73(3-4), 1995, pp. 174-176
Citations number
9
Categorie Soggetti
Physics
Journal title
Canadian journal of physics → ACNP
ISSN journal
00084204
Volume
73
Issue
3-4
Year of publication
1995
Pages
174 - 176
Database
ISI
SICI code
0008-4204(1995)73:3-4<174:COAPHI>2.0.ZU;2-A
Abstract
A highly photosensitive diode area was created in solid solutions of H g1-xCdxTe (x approximate to 0.2) (MCT) without melting its surface. Th e idea of the possible formation of pn heterojunctions, which was indi cated by computer modelling of the mass transportation processes under laser treatment of the MCT, was experimentally realized. MCT samples were irradiated with an Nd:YAG laser having an energy density of 0.7 J cm(-2). The presence of a heterojunction on a surface not far below t he upper surface has been verified by photovoltaic measurements and X- ray microanalysis as well as by current-voltage characteristics.