DETECTION OF TEMPERATURE RISE DURING CLEAVAGE OF SILICON

Authors
ZHAO D HANEMAN D MCALPINE NS
Citation
D. Zhao et al., DETECTION OF TEMPERATURE RISE DURING CLEAVAGE OF SILICON, Surface science, 369(1-3), 1996, pp. 76-84
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
369
Issue
1-3
Year of publication
1996
Pages
76 - 84
Database
ISI
SICI code
0039-6028(1996)369:1-3<76:DOTRDC>2.0.ZU;2-R
Abstract
We have measured a rise in temperature upon cleavage of Si wafers, whi ch is consistent with the energy of bond rupture appearing as heat on the surface. The temperature of the surface is high for a significant period, requiring consideration in cleaved-surface structure calculati ons. Cleavage in vacuum gives a shorter temporal profile than in air, suggesting a more efficient surface-to-bulk phonon coupling for clean surfaces.