RHEED INTENSITY OSCILLATIONS OBSERVED DURING GROWTH OF GE ON SI(111) SUBSTRATES

Reflection high-energy electron diffraction (RHEED) intensity oscillat ions were observed during molecular beam epitaxy growth of Ge on a Si( 111) surface. At 250 degrees C the oscillations continue up to 6 ML. W hen Ge is grown at room temperature on the Ge/Si(111) surface the osci llations continue up to 14 ML. During the growth of Ge thin films on a clean Si(111)-7x7 surface at room temperature the oscillations contin ue up to 10 ML. The intensity of the reflected beam is calculated by s olving the one-dimensional Schrodinger equation. A simple birth-death model was used for the growth simulation in order to investigate funda mental behaviours of reflectivity change during the Stranski-Krastanov growth of Ge on the Si(111) surface at 250 degrees C.