REACTIVE INTERMIXING AT THE AU-INP(100) INTERFACE - NEW PHOTOEMISSIONRESULTS

Using photoelectron emission at different photon energies we have stud ied the interaction of gold (up to ten monolayers nominal coverage) de posited at room temperature and at T = 110 K on InP(100)-(4 x 2) surfa ces. From the analysis of core-level and valence-band spectra, we deri ve information on interfacial reactions and overlayer growth modes. At T = 110 K interface disruption is small and we observed a rather homo geneous gold overlayer with only a minute concentration of In after de position of 10 ML of Au. At T = 300 K severe disruption occurs, and up to 10 ML of Au an In concentration of at least 10% is clearly identif ied. Annealing to T = 560 K leads to the formation of InxAu1-x cluster s with x up to 0.3.