CHEMICAL DOWNSTREAM ETCHING OF SILICON-NITRIDE AND POLYCRYSTALLINE SILICON USING CF4 O-2/N-2 - SURFACE CHEMICAL EFFECTS OF O-2 AND N-2 ADDITIVES/

Authors
BEULENS JJ KASTENMEIER BEE MATSUO PJ OEHRLEIN GS
Citation
Jj. Beulens et al., CHEMICAL DOWNSTREAM ETCHING OF SILICON-NITRIDE AND POLYCRYSTALLINE SILICON USING CF4 O-2/N-2 - SURFACE CHEMICAL EFFECTS OF O-2 AND N-2 ADDITIVES/, Applied physics letters, 66(20), 1995, pp. 2634-2636
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
20
Year of publication
1995
Pages
2634 - 2636
Database
ISI
SICI code
0003-6951(1995)66:20<2634:CDEOSA>2.0.ZU;2-9