LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF VERY-LOW RESISTIVITY TIN FOR INP METALLIZATION USING METALORGANICPRECURSORS

Authors
BOUMERZOUG M MASCHER P SIMMONS JG
Citation
M. Boumerzoug et al., LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF VERY-LOW RESISTIVITY TIN FOR INP METALLIZATION USING METALORGANICPRECURSORS, Applied physics letters, 66(20), 1995, pp. 2664-2666
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
20
Year of publication
1995
Pages
2664 - 2666
Database
ISI
SICI code
0003-6951(1995)66:20<2664:LEC>2.0.ZU;2-G