MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZN1-XCDXSE ON INP SUBSTRATES

Authors
DAI N CAVUS A DZAKPASU R TAMARGO MC SEMENDY F BAMBHA N HWANG DM CHEN CY
Citation
N. Dai et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZN1-XCDXSE ON INP SUBSTRATES, Applied physics letters, 66(20), 1995, pp. 2742-2744
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
20
Year of publication
1995
Pages
2742 - 2744
Database
ISI
SICI code
0003-6951(1995)66:20<2742:MEOHZO>2.0.ZU;2-U