DESCRIPTION OF THE ELECTRONIC DENSITY-OF-STATES OF A-C-H FILMS WITH LOW AND HIGH OPTICAL GAPS

Citation
C. Cardinaud et al., DESCRIPTION OF THE ELECTRONIC DENSITY-OF-STATES OF A-C-H FILMS WITH LOW AND HIGH OPTICAL GAPS, DIAMOND AND RELATED MATERIALS, 4(7), 1995, pp. 897-902
Citations number
24
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
4
Issue
7
Year of publication
1995
Pages
897 - 902
Database
ISI
SICI code
0925-9635(1995)4:7<897:DOTEDO>2.0.ZU;2-Y
Abstract
In order to obtain information about the density and energy distributi on of the pi states introduced by the sp(2) carbon sites in hydrogenat ed amorphous carbon (a-C:H) films, we have combined X-ray (XPS) and ul traviolet (UPS) photoelectron spectroscopy experiments with optical me asurements in the 0.5-6 eV spectral range. Attention has also been pai d to plasmon losses from both XPS and optical data. The results obtain ed on two series of a-C:H films prepared by the same plasma technique but presenting different optical gaps (2.9 and 1.6 eV respectively) ar e compared and discussed in relation to the sample microstructure.