M. Friedrich et al., THE LOCAL-DISTRIBUTION OF SIC FORMED BY DIAMOND HETEROEPITAXY ON SILICON STUDIED BY INFRARED-SPECTROSCOPY, DIAMOND AND RELATED MATERIALS, 4(7), 1995, pp. 944-947
Fourier transform spectroscopy in the infrared spectral range was appl
ied in order to characterize interlayers and overlayers formed by the
diamond deposition process on silicon substrates. The transmittance sp
ectra are compared with model calculations. An analysis of lineshape,
frequency shift and halfwidth of the SiC phonon band yields informatio
n on structural properties which are found to depend strongly on the l
ateral position on the sample surface.