THE LOCAL-DISTRIBUTION OF SIC FORMED BY DIAMOND HETEROEPITAXY ON SILICON STUDIED BY INFRARED-SPECTROSCOPY

Authors
FRIEDRICH M MORLEY S MAINZ B HINNEBERG HJ ZAHN DRT
Citation
M. Friedrich et al., THE LOCAL-DISTRIBUTION OF SIC FORMED BY DIAMOND HETEROEPITAXY ON SILICON STUDIED BY INFRARED-SPECTROSCOPY, DIAMOND AND RELATED MATERIALS, 4(7), 1995, pp. 944-947
Citations number
6
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
4
Issue
7
Year of publication
1995
Pages
944 - 947
Database
ISI
SICI code
0925-9635(1995)4:7<944:TLOSFB>2.0.ZU;2-7
Abstract
Fourier transform spectroscopy in the infrared spectral range was appl ied in order to characterize interlayers and overlayers formed by the diamond deposition process on silicon substrates. The transmittance sp ectra are compared with model calculations. An analysis of lineshape, frequency shift and halfwidth of the SiC phonon band yields informatio n on structural properties which are found to depend strongly on the l ateral position on the sample surface.