PRODUCTION OF POLYCRYSTALLINE DIAMOND FILMS BY DC GLOW-DISCHARGE CVD

Polycrystalline diamond films on various substrates (W, Mo, Si, Si3N4, SiC and WCo) have been grown by the CVD method in a d.c. glow dischar ge plasma. The diamond crystal nucleation density was studied as a fun ction of the substrate temperature in the range from 700 to 1100 degre es C. The experiments at constant discharge parameters have revealed t he increase in the diamond nucleation density as the substrate heating temperature decreased. The diamond crystal density varied from 10(3) cm(-2) at 900 degrees C to 10(8) cm(-2) at 700 degrees C. An increase in the diamond nucleation density with decreasing synthesis temperatur e was observed on all types of substrate material.