ELECTRON-HOLE ORDERING AND 1 OMEGA NOISE IN AMORPHOUS-SEMICONDUCTORS/

Citation
Bp. Antonyuk et al., ELECTRON-HOLE ORDERING AND 1 OMEGA NOISE IN AMORPHOUS-SEMICONDUCTORS/, Physics letters. A, 201(1), 1995, pp. 77-80
Citations number
6
Categorie Soggetti
Physics
Journal title
ISSN journal
03759601
Volume
201
Issue
1
Year of publication
1995
Pages
77 - 80
Database
ISI
SICI code
0375-9601(1995)201:1<77:EOA1ON>2.0.ZU;2-8
Abstract
Theoretical and experimental studies of amorphous semiconductors As2S5 show that photogenerated trapped electrons and holes are strongly cor related. The Fourier transform of the electron (hole) density time flu ctuations (and, hence, of the refractive index variations) indicates t hat universal 1/omega noise is present in an ordered state, while diso rdered electron-hole systems give white noise. We give experimental ev idence of this 1/omega noise in AS(2)S(5) in support of the idea of el ectron-hole self-organization under light pumping.