ELECTRICAL AND OPTICAL CHARACTERIZATION OF ELECTRON-BEAM EVAPORATED IN2SE3 THIN-FILMS

Electrical and optical measurements are carried out on In2Se3 polycrys talline thin films obtained by electron beam evaporation and thermally annealed at different temperatures. The temperature dependence of Hal l mobility and de conductivity is tentatively explained in terms of Pe tritz's model where the scattering is due to the grain boundaries of t he polycrystallites. The effect of grain sizes on the mobility and the barrier height is also reported. The optical results indicate that th e absorption mechanism is due to an indirect transition. The energy ga p in the as-deposited samples is about 1.40 eV and increases with ther mal annealing.