A STUDY OF CARRIER TRANSPORT MECHANISMS IN PB PBSE SCHOTTKY CONTACTS/

Authors
DOSSANTOS O MATHET V FAU C CHARAR S COLLOT P NGUYENVANDAU F OBADI A
Citation
O. Dossantos et al., A STUDY OF CARRIER TRANSPORT MECHANISMS IN PB PBSE SCHOTTKY CONTACTS/, Physica status solidi. a, Applied research, 148(2), 1995, pp. 475-483
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
148
Issue
2
Year of publication
1995
Pages
475 - 483
Database
ISI
SICI code
0031-8965(1995)148:2<475:ASOCTM>2.0.ZU;2-P
Abstract
Recent developments in epitaxial growth of IV-VI semiconductors on Si( 111) substrates result in the elaboration of heterostructures such as p-PbSe/CaF2/Si(111) which are fully compatible with standard photolith ographic procedures. Current-voltage measurements performed on Pb/p-Pb Se barriers in the temperature range of 4 to 300 K and their theoretic al treatment are reported. A detailed analysis of the carrier transpor t mechanisms through the junction as well as the variation of the barr ier height with temperature are obtained.