STRAIN-CONFINED WIRES AND DOTS AT A GAAS ALXGA1-XAS INTERFACE/

Authors
GU YT ZHANG Y STURGE MD KASH K VANDERGAAG BP GOZDZ AS FLOREZ LT HARBISON JP
Citation
Yt. Gu et al., STRAIN-CONFINED WIRES AND DOTS AT A GAAS ALXGA1-XAS INTERFACE/, Superlattices and microstructures, 17(1), 1995, pp. 67-71
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
17
Issue
1
Year of publication
1995
Pages
67 - 71
Database
ISI
SICI code
0749-6036(1995)17:1<67:SWADAA>2.0.ZU;2-Y
Abstract
We have observed lateral exciton confinement at the GaAs/Al(x)Gs(1-x)A s interface. The confinement is achieved in both the growth and latera l directions by the strain potential under an amorphous carbon stresso r. The potential well Varies from 15 meV to 40 meV for different stres sor sizes. We have also made transient measurements on this structure, which show efficient exciton transfer from the bulk GaAs to the confi ned region.