ORIGIN OF CARBON AND ITS INFLUENCE ON PHOTOLUMINESCENCE IN POROUS SILICON

Citation
R. Siegele et al., ORIGIN OF CARBON AND ITS INFLUENCE ON PHOTOLUMINESCENCE IN POROUS SILICON, Solid state communications, 93(10), 1995, pp. 833-836
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
93
Issue
10
Year of publication
1995
Pages
833 - 836
Database
ISI
SICI code
0038-1098(1995)93:10<833:OOCAII>2.0.ZU;2-F
Abstract
Samples of porous Si (PS) were prepared from p-type 10-35 Omega-cm Si under anodisation in aqueous HF (20%) for 10 min. The composition of t he PS was measured by heavy-ion elastic recoil detection analysis (HIE RDA). In all samples a considerable carbon content varying from 2-20% was measured, while the oxygen and hydrogen concentrations ranged from 2-25% and 10-25%, respectively. The sample wax removing procedure was identified as a source for the high carbon content. The concentration of carbon and its influence on the photoluminescence due to different treatments of PS was investigated.