INP GROWTH ON ION-IMPLANTED INP SUBSTRATE - A NEW METHOD TO ACHIEVE SELECTIVE-AREA MOVPE

A novel method for selective area MOVPE of InP on ion-implanted InP su bstrate has been developed. The substrate is partially masked by photo resist, which protects the underlying surface from modification by ion implantation. On these areas the InP growth is single crystalline whi le a more polycrystalline phase is deposited on the implanted areas. D epending on the TMIn partial pressure, the growth rate of the single c rystalline material is enhanced compared to the polycrystalline phase, which leads to selective growth at a low TMIn partial pressure and to phase selective growth at high partial pressures. The carrier mobilit y and the specific resistance of the polycrystalline material was foun d to be higher than in single crystalline InP. The ratio of the mobili ty in polycrystalline to the mobility in single crystalline InP depend s on the growth temperature. The influence of the growth parameters, t otal reactor pressure, TMIn partial pressure, growth temperature and t ime, and the influence of the geometric dimensions was investigated. T his technique should allow the growth of small structures at short dis tances like matrices of quantum dots or quantum wires.