DEGRADATION OF LUMINESCENCE AND FATIGUE EFFECTS IN POROUS SILICON

Authors
GRIVICKAS V BERNUSSI A BASMAJI P MATVIENKO B KOLENDA J
Citation
V. Grivickas et al., DEGRADATION OF LUMINESCENCE AND FATIGUE EFFECTS IN POROUS SILICON, International journal of optoelectronics, 9(4), 1994, pp. 311-314
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
International journal of optoelectronics → ACNP
ISSN journal
09525432
Volume
9
Issue
4
Year of publication
1994
Pages
311 - 314
Database
ISI
SICI code
0952-5432(1994)9:4<311:DOLAFE>2.0.ZU;2-I
Abstract
The results of photoluminescence (PL) fatigue in anodized porous silic on (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, com pared with the long wavelength FL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed