DEPOSITION TEMPERATURE-DEPENDENT CHARACTERISTICS OF MAGNETRON-SPUTTERED CHROMIUM NITRIDE FILMS

Chromium nitride layers with CrN and Cr2N stoichiometry were deposited onto silicon substrates by means of reactive RF-magnetron sputtering at different substrate temperatures (300-830 K). The layer thicknesses were 100 to 1500 nm. Composition, surface roughness, grain size, micr ostructure and phase formation were analysed using ass (Rutherford bac kscattering spectrometry), RNRA (resonant nuclear reaction analysis), PAC (perturbed angular correlation), STM (scanning tunnelling microsco py) and XRD (x-ray diffraction). ass and RNRA depth profiling of the s amples revealed for both nitrides homogeneous Cr and N concentrations over the whole layer depth. For Cr2N films, indications of a phase tra nsformation due to the increased target temperature from a disordered Cr/N phase to the ordered Cr2N phase were obtained via XRD and PAC. Th e lateral grain size measured with STM and the vertical grain size mea sured with XRD are approximately the same for both nitrides at all dep osition temperatures.