AC HOT-CARRIER-INDUCED DEGRADATION IN NMOSFETS WITH N2O-BASED GATE DIELECTRICS

Authors
ZENG X LAI PT NG WT
Citation
X. Zeng et al., AC HOT-CARRIER-INDUCED DEGRADATION IN NMOSFETS WITH N2O-BASED GATE DIELECTRICS, IEEE electron device letters, 18(2), 1997, pp. 39-41
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
2
Year of publication
1997
Pages
39 - 41
Database
ISI
SICI code
0741-3106(1997)18:2<39:AHDINW>2.0.ZU;2-A
Abstract
Frequency-dependent ac-stress-induced degradation in NMOSFET's with N2 O-grown and N2O-nitrided gate oxides was investigated. Suppressed devi ce degradation is observed in both N2O-based devices as compared to Si O2 device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides. Moreover, when comparing the two N2 O-based oxides, N2O-grown oxide device exhibits enhanced degradation t han N2O-nitrided oxide device. Charge pumping measurements reveal that N2O-nitrided oxide has better immunity to interface-state and neutral -electron-trap generation under dynamic stress.