ARSENIC DEACTIVATION ENHANCED DIFFUSION AND THE REVERSE SHORT-CHANNELEFFECT

The effect of enhanced diffusion caused by the electrical deactivation of arsenic on the reverse short-channel effect (RSCE) in NMOS devices is investigated, A simple four-mask process was utilized to fabricate deep sub-micron NMOS devices, Source/drain (S/D) implant and anneal c onditions were varied in order to determine their implications on the RSCE, Results indicate that when high concentrations of arsenic deacti vate, enhanced diffusion occurs, leading to significantly more RSCE, T his implies that the dose of the arsenic implant and the subsequent an neals should be carefully considered in source/drain engineering.