HIGH-RESOLUTION CROSS-SECTIONAL IMAGING OF MOSFETS BY SCANNING RESISTANCE MICROSCOPY

Authors
NXUMALO JN SHIMIZU DT THOMSON DJ SIMARDNORMADIN M
Citation
Jn. Nxumalo et al., HIGH-RESOLUTION CROSS-SECTIONAL IMAGING OF MOSFETS BY SCANNING RESISTANCE MICROSCOPY, IEEE electron device letters, 18(2), 1997, pp. 71-73
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
2
Year of publication
1997
Pages
71 - 73
Database
ISI
SICI code
0741-3106(1997)18:2<71:HCIOMB>2.0.ZU;2-I
Abstract
In this letter, high-resolution (approximate to 40 nm) Scanning Resist ance Microscopy (SRM) images of MOSFET cross sections taken with comme rcially available Boron-doped diamond tips are presented,Diamond tips were found to offer significant improvement in resolution over metal t ips, The SRM profiles using diamond tips can delineate the source/drai n regions as well as the lightly-doped drains, Furthermore, the SRM pr ofiles allow delineation between silicide and polysilicon on the gate, as well as delineation between the silicide and diffusion in the sour ce/drain regions.