SCALING THEORY FOR CYLINDRICAL, FULLY-DEPLETED, SURROUNDING-GATE MOSFETS

Authors
AUTH CP PLUMMER JD
Citation
Cp. Auth et Jd. Plummer, SCALING THEORY FOR CYLINDRICAL, FULLY-DEPLETED, SURROUNDING-GATE MOSFETS, IEEE electron device letters, 18(2), 1997, pp. 74-76
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
2
Year of publication
1997
Pages
74 - 76
Database
ISI
SICI code
0741-3106(1997)18:2<74:STFCFS>2.0.ZU;2-M
Abstract
We present a scaling theory for fully depleted, cylindrical MOSFET's, This theory was derived from the cylindrical form of Poisson's equatio n by assuming a parabolic potential in the radial direction, Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula, By employing the scaling theory a comparison with double-gate (DG) MOSFET's was carried out illustrati ng an improvement of up to 40% in the minimum effective channel length for the cylindrical device.