For the integrated optic erbium-doped phosphate silica amplifier, a co
mprehensive model is presented which includes high-concentration dissi
pative ion-ion interactions. Based on actual waveguide parameters, the
model is seen to reproduce measured gains closely. A rigorous design
optimization is performed, and the influence of variations in the laun
ched pump power, the core cross section, the waveguide length, the erb
ium concentration, and the background losses are evaluated. Optimal de
sign proposals are given, and the process reproducibility of the propo
sed optimal design is examined. Requirements for process parameter con
trol in the wafer fabrication are set up.