REFLECTANCE ANISOTROPY SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OF SUBMONOLAYER COVERAGES OF SI GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY

Authors
WOOLF DA ROSE KC RUMBERG J WESTWOOD DI REINHARDT F MORRIS SJ RICHTER W WILLIAMS RH
Citation
Da. Woolf et al., REFLECTANCE ANISOTROPY SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OF SUBMONOLAYER COVERAGES OF SI GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 51(7), 1995, pp. 4691-4694
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
7
Year of publication
1995
Pages
4691 - 4694
Database
ISI
SICI code
0163-1829(1995)51:7<4691:RASARH>2.0.ZU;2-8