EFFECT OF ELECTRON-ELECTRON SCATTERING ON CARRIER TRANSPORT IN THE N-CHANNEL OF A SUBMICRON SILICON MOS FIELD-EFFECT TRANSISTOR - MONTE-CARLO STUDY

Authors
BORZDOV VM ZHEVNYAK OG KOMAROV FF
Citation
Vm. Borzdov et al., EFFECT OF ELECTRON-ELECTRON SCATTERING ON CARRIER TRANSPORT IN THE N-CHANNEL OF A SUBMICRON SILICON MOS FIELD-EFFECT TRANSISTOR - MONTE-CARLO STUDY, Semiconductors, 29(2), 1995, pp. 95-98
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
2
Year of publication
1995
Pages
95 - 98
Database
ISI
SICI code
1063-7826(1995)29:2<95:EOESOC>2.0.ZU;2-3