STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE

Authors
IVANOV PA PANTELEEV VN SAMSONOVA TP CHELNOKOV VE
Citation
Pa. Ivanov et al., STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE, Semiconductors, 29(2), 1995, pp. 135-137
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
2
Year of publication
1995
Pages
135 - 137
Database
ISI
SICI code
1063-7826(1995)29:2<135:SOSAAS>2.0.ZU;2-5