TRANSFORMATION OF THE DEFECT SYSTEM ALONG THICKNESS IN A CDTE WAFER DURING DIFFUSIVE DOPING WITH GALLIUM

Authors
BABENTSOV VN VLASENKO AI TARBAEV NI
Citation
Vn. Babentsov et al., TRANSFORMATION OF THE DEFECT SYSTEM ALONG THICKNESS IN A CDTE WAFER DURING DIFFUSIVE DOPING WITH GALLIUM, Semiconductors, 29(2), 1995, pp. 165-168
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
2
Year of publication
1995
Pages
165 - 168
Database
ISI
SICI code
1063-7826(1995)29:2<165:TOTDSA>2.0.ZU;2-L