STRAINED THIN-LAYER INAS1-X-YSBXBIY INSB HETEROSTRUCTURES - CALCULATION OF CERTAIN PHYSICAL-PROPERTIES/

Authors
AKCHURIN RK AKIMOV OV
Citation
Rk. Akchurin et Ov. Akimov, STRAINED THIN-LAYER INAS1-X-YSBXBIY INSB HETEROSTRUCTURES - CALCULATION OF CERTAIN PHYSICAL-PROPERTIES/, Semiconductors, 29(2), 1995, pp. 183-186
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
2
Year of publication
1995
Pages
183 - 186
Database
ISI
SICI code
1063-7826(1995)29:2<183:STIIH->2.0.ZU;2-6