The dielectric properties of CsTiOAsO4 single crystals have been measu
red in the temperature range from -170 degrees C: to 200 degrees C at
different frequencies. The material exhibits a clear dielectric relaxa
tion process. The dielectric relaxation process is well described by t
he Cole-Cole plots with a relaxation time distribution parameter of 0.
17. The temperature dependence of optimum relaxation time of the relax
ation process obeys the Arrhenius relationship reasonably well with an
activation energy of 0.4 eV. Based on the above results, the mechanis
m of the relaxation process is discussed using the polarizability and
movement characteristics of the Cs+ ion in the open crystallographic s
tructure.