DIELECTRIC-PROPERTIES OF CSTIOASO4 SINGLE-CRYSTAL

Citation
Zy. Cheng et al., DIELECTRIC-PROPERTIES OF CSTIOASO4 SINGLE-CRYSTAL, Ferroelectrics. Letters section, 22(1-2), 1996, pp. 47-52
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07315171
Volume
22
Issue
1-2
Year of publication
1996
Pages
47 - 52
Database
ISI
SICI code
0731-5171(1996)22:1-2<47:DOCS>2.0.ZU;2-Q
Abstract
The dielectric properties of CsTiOAsO4 single crystals have been measu red in the temperature range from -170 degrees C: to 200 degrees C at different frequencies. The material exhibits a clear dielectric relaxa tion process. The dielectric relaxation process is well described by t he Cole-Cole plots with a relaxation time distribution parameter of 0. 17. The temperature dependence of optimum relaxation time of the relax ation process obeys the Arrhenius relationship reasonably well with an activation energy of 0.4 eV. Based on the above results, the mechanis m of the relaxation process is discussed using the polarizability and movement characteristics of the Cs+ ion in the open crystallographic s tructure.