LOW-FREQUENCY GATE CURRENT NOISE IN HIGH-ELECTRON-MOBILITY TRANSISTORS - EXPERIMENTAL-ANALYSIS

Authors
BERTUCCIO G DEGERONIMO G LONGONI A PULLIA A
Citation
G. Bertuccio et al., LOW-FREQUENCY GATE CURRENT NOISE IN HIGH-ELECTRON-MOBILITY TRANSISTORS - EXPERIMENTAL-ANALYSIS, IEEE electron device letters, 16(3), 1995, pp. 103-105
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
3
Year of publication
1995
Pages
103 - 105
Database
ISI
SICI code
0741-3106(1995)16:3<103:LGCNIH>2.0.ZU;2-U
Abstract
An experimental investigation on the gate current noise in a pseudomor phic HEMT has been carried out. The measurements have been performed f rom 10 Hz to 100 kHz, at different bias conditions. It is shown that t he noise spectral power density strongly depends on the biasing point and can be explained in terms of carrier trapping phenomena by means o f packets of Lorentzian components.