2-D DOPANT PROFILING IN VLSI DEVICES USING DOPANT-SELECTIVE ETCHING -AN ATOMIC-FORCE MICROSCOPY STUDY

We report a detailed mapping of a 2-D dopant profile on a fully proces sed industrial sample with large dynamic range and high spatial resolu tion by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with tho se obtained from SRP and SIMS as corroborative methods. We also discus s the most critical factors which influence the applicability, reprodu cibility, and reliability of this method.