INVESTIGATION OF THE DISTRIBUTION OF SILICON INTERSTITIALS IN SILICONAND SILICON-ON-INSULATOR STRUCTURES AFTER THERMAL-OXIDATION

Authors
TSOUKALAS D TSAMIS C
Citation
D. Tsoukalas et C. Tsamis, INVESTIGATION OF THE DISTRIBUTION OF SILICON INTERSTITIALS IN SILICONAND SILICON-ON-INSULATOR STRUCTURES AFTER THERMAL-OXIDATION, Applied physics letters, 66(8), 1995, pp. 971-973
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
8
Year of publication
1995
Pages
971 - 973
Database
ISI
SICI code
0003-6951(1995)66:8<971:IOTDOS>2.0.ZU;2-2